Switch Cell Design for Novel High-frequency Press-pack SiC FET Modules

  • Date

    22.01.2024

  • Language

    English

  • Category

    News

  • Share

AMX is proud to collaborate with research institutes all over the world. As a Company projected in dynamic development of technology, we value the struggle for the future brought forward by influential institutions. Recently one of our machines was used to conduct studies by the research team of the University of Nebraska-Lincoln. Today, we are glad to present you the article drafted as a result from the efforts of the academics of the Department Electrical & Computer Engineering involved in the experimentation.

Authors

  • Ekaterina Muravleva Dept. of Elect. and Comput. Eng. University of Nebraska-Lincoln Lincoln, NE 68588-0511, USA emuravleva2@huskers.unl.edu
  • Bogac Canbaz Dept. of Elect. and Comput. Eng. University of Nebraska-Lincoln Lincoln, NE 68588-0511, USA bcanbaz2@huskers.unl.edu
  • Jun Wang Dept. of Elect. and Comput. Eng. University of Nebraska-Lincoln Lincoln, NE 68588-0511, USA junwang@unl.edu
  • Liyan Qu Dept. of Elect. and Comput. Eng. University of Nebraska-Lincoln Lincoln, NE 68588-0511, USA lqu2@unl.edu
  • Jerry Hudgins Dept. of Elect. and Comput. Eng. University of Nebraska-Lincoln Lincoln, NE 68588-0511, USA jhudgins2@unl.edu

Abstract

This paper presents a novel high-frequency press[1]pack (HFPP) SiC FET module for broad medium-voltage (MV) high-power areas, such as grid distribution and protection and high-speed drives. By incorporating a significant number of low-specific-resistance SiC FET dies in a single package, the SiC FET modules are expected to achieve at least 5× lower conduction losses and 10× faster switching frequency compared to Si press-pack (PP) IGBTs and maintain a short-circuit failure mode (SCFM). As an essential part of the HFPP SiC module development, this work proposes a novel package-level switch-cell building block (SCBB) concept and rotated stacking structure for low power-loop inductance in a variety of multilevel topologies, along with the switch cell’s design and packaging details. The latter includes double-sided sintering of SiC dies and a proposed four-leg monolithic spring for pressure generation. Simulations, fabrication, and partial experimental validation are exhibited.
Index Terms—SiC FET package, high-frequency press-pack module, double-sided sintering, monolithic spring, short-circuit failure mode.

Read full paper




Related posts

News 03.05.2022
Language: English
Powering up - Electronics Weekly (27th April 2022)

Boundaries are being pushed in all engineering sectors, but few more so than with regards to power electronics.

Discover our products
Our products